3DD8A Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8A .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS.

📥 Download Datasheet

3DD8A Datasheet Preview — Preview of 3DD8A PDF

Datasheet Specifications

Part number: 3DD8A
Manufacturer: Inchange Semiconductor
File Size: 184.81 KB
Datasheet: 3DD8A-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuou

3DD8A Distributors

📁 Related Datasheet

3DD880 3DD880X 3DD10 3DD100 3DD100A 3DD100B

📌 All Tags

3DD8A Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 3DD8A-like datasheet