3DD8E Datasheet - Inchange Semiconductor

3DD8E, Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8E DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR

Applications

* Designed for power amplifier, low speed switching and regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continu

3DD8E-InchangeSemiconductor.pdf