3DD8B Datasheet - Inchange Semiconductor

3DD8B, Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8B DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR

Applications

* Designed for power amplifier, low speed switching and regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuou

3DD8B-InchangeSemiconductor.pdf