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3DD8F

Silicon NPN Power Transistor

3DD8F General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS
*Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA.

3DD8F Datasheet (184.67 KB)

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Datasheet Details

Part number:

3DD8F

Manufacturer:

Inchange Semiconductor

File Size:

184.67 KB

Description:

Silicon npn power transistor.

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