3DD8F Datasheet, Transistor, Inchange Semiconductor

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Part number:

3DD8F

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Inchange Semiconductor

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184.67kb

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📄 Datasheet

Description:

Silicon npn power transistor.

  • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)
  • Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max

  • Datasheet Preview: 3DD8F 📥 Download PDF (184.67kb)
    Page 2 of 3DD8F

    3DD8F Application

    • Applications
    • Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    TAGS

    3DD8F
    Silicon
    NPN
    Power
    Transistor
    Inchange Semiconductor

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