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3DD8D - Silicon NPN Power Transistor

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Datasheet Details

Part number 3DD8D
Manufacturer Inchange Semiconductor
File Size 201.57 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 3DD8D-InchangeSemiconductor.pdf

3DD8D Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier, low speed switching and regulated power supply applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Vo

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