3DD8D Datasheet - Inchange Semiconductor

3DD8D, Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) *Collector-Emitter Saturation Voltag

Applications

* Designed for power amplifier, low speed switching and regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

3DD8D-InchangeSemiconductor.pdf