3DD8D Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A. Minimum Lo.

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Datasheet Specifications

Part number: 3DD8D
Manufacturer: Inchange Semiconductor
File Size: 201.57 KB
Datasheet: 3DD8D-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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3DD8D Silicon NPN Power Transistor Inchange Semiconductor

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