3DD880X NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors .
X: DC Current Gain -hFE = 55-75@ IC= 0. Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min). Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number: 3DD880X
Manufacturer: INCHANGE
File Size: 204.66 KB
Datasheet: 3DD880X-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM

3DD880X Distributors

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3DD880X NPN Transistor INCHANGE

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