3DD880X Datasheet - INCHANGE

3DD880X, NPN Transistor

isc Silicon NPN Power Transistors DESCRIPTION *X: DC Current Gain -hFE = 55-75@ IC= 0.5A *Collector-Emitter Breakdown Voltage- : V(BR) CEO= 1

Applications

* Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM

3DD880X-INCHANGE.pdf