B1353 Silicon PNP Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor .
Good Linearity of hFE. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Complement to Type 2SD2033 APPLICATIONS. Design.

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Datasheet Specifications

Part number: B1353
Manufacturer: INCHANGE
File Size: 176.67 KB
Datasheet: B1353-INCHANGE.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous Collector Power Dissipation

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B1353 Silicon PNP Power Transistor INCHANGE

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