Datasheet4U Logo Datasheet4U.com

B1353 - Silicon PNP Power Transistor

B1353 Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor .
Good Linearity of hFE. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Complement to Type 2SD2033 APPLICATIONS. Design.

B1353 Applications

* Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous Collector Power Dissipation

📥 Download Datasheet

Preview of B1353 PDF
datasheet Preview Page 2

Datasheet Details

Part number
B1353
Manufacturer
INCHANGE
File Size
176.67 KB
Datasheet
B1353-INCHANGE.pdf
Description
Silicon PNP Power Transistor

📁 Related Datasheet

  • B1351 - 2SB1351 (Sanken Electric)
  • B1357 - 2SB1357 (Rohm)
  • B130 - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
  • B130-E3 - Surface Mount Schottky Barrier Rectifier (Vishay)
  • B130-M3 - Surface Mount Schottky Barrier Rectifier (Vishay)
  • B1301 - PNP SIlicon Transistor (Renesas)
  • B1302 - PNP Epitaxial Planar Silicon Transistor (Sanyo)
  • B130B - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)

📌 All Tags

Silicon PNP Power Transistor INCHANGE
INCHANGE B1353-like datasheet

B1353 Stock/Price