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BD839 NPN Transistor

BD839 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD839 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD840.

BD839 Applications

* Designed for use in television circuits and audio applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collect

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Datasheet Details

Part number
BD839
Manufacturer
INCHANGE
File Size
207.69 KB
Datasheet
BD839-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD839-like datasheet