BDY47 Datasheet - INCHANGE

BDY47, NPN Transistor

isc Silicon NPN Power Transistor BDY47 DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) *DC Current Gain- : hFE=20(M

Applications

* Voltage regulator
* Inverter
* Switching mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCES Collector-Emitter Voltage 750 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Colle

BDY47-INCHANGE.pdf