BDY56 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

BDY56

Manufacturer:

INCHANGE

File Size:

203.47kb

Download:

📄 Datasheet

Description:

Npn transistor.

Excellent Safe Operating Area

DC Current Gain- : hFE=20-70@IC = 4A

Collector-Emitter Saturation Voltage- :

BDY56 Application

• Applications
• Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

TAGS

BDY56

INCHANGE

📁 Related Datasheet

BDY53 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=60V(Min.) ·Collector-Emitter Saturation Voltage- : VC.

BDY53 - (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)
NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA They are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Swi.

BDY54 - Bipolar NPN Device (Seme LAB)
BDY54 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY54 - SILICON NPN TRANSISTOR (TT)
SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options.

BDY54 - (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)
NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA They are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Swi.

BDY54 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) ·Collector-Emitter Saturation Voltage- : .

BDY55 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY55 .. DESCRIPTION ·With TO-3 package ·High current.

BDY55 - Bipolar NPN Device (Seme LAB)
BDY55 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY55 - (BDY55 / BDY56) NPN SILICON TRANSISTORS (Comset Semiconductors)
BDY55 – BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Signal Power Amplification High .

BDY55 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BDY55 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturatio.