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BDY61 NPN Transistor

BDY61 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). Low Collector-Emitter Saturation Voltage. Excellent Safe Operating Area.

BDY61 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak IB B

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Datasheet Details

Part number
BDY61
Manufacturer
INCHANGE
File Size
196.97 KB
Datasheet
BDY61-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDY61-like datasheet