BU508DR NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Voltage Capability. High Current Capability. Fast Switching Speed. Built-in Integrated Diode. Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number: BU508DR
Manufacturer: INCHANGE
File Size: 213.70 KB
Datasheet: BU508DR-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8.0 A ICM Col

BU508DR Distributors

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BU508DR NPN Transistor INCHANGE

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