IPA180N10N3 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3 *.

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Datasheet Specifications

Part number: IPA180N10N3
Manufacturer: INCHANGE
File Size: 240.29 KB
Datasheet: IPA180N10N3-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Low drain-source on-resistance: RDS(on) ≤18mΩ (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 28 IDM Drain Current-Single Pulsed 112 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

IPA180N10N3 Distributors

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IPA180N10N3 N-Channel MOSFET INCHANGE

INCHANGE IPA180N10N3-like datasheet