IPA105N15N3G
Infineon ↗ Technologies
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Optimos3 power-transistor.
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IPA105N15N3 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.
IPA100N08N3G - Power-Transistor
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IPA100N08N3 G
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters .
IPA126N10N3G - Power-Transistor
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IPA126N10N3 G
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Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
IPA180N10N3 - N-Channel MOSFET
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isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤18mΩ (max) ·Enhancement mode ·Fast Switc.
IPA180N10N3 - Power-Transistor
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IPA180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
IPA180N10N3G - Power-Transistor
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IPA180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
IPA028N08N3G - Power-Transistor
(Infineon Technologies)
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gat.
IPA029N06N - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSTM Power-Transistor, 60 V IPA029N06N
Data Sheet
Rev. 2.2 Final
Power Managem.
IPA029N06N - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.
IPA030N10N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤ 3mΩ (max) ·Enhancement mode ·Fast Switc.