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IPA126N10N3G - Power-Transistor

Infineon Technologies

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Datasheet Details

Part number: IPA126N10N3G
Manufacturer: Infineon ↗ Technologies
File Size: 308.06 KB
Datasheet: IPA126N10N3G_InfineonTechnologies.pdf
Description: Power-Transistor

IPA126N10N3G Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID 100 12.6 35 V mΩ A.
Ideal for high-frequency switching and synchronous rectification Type IPA126N10N3 G Package Marking PG-TO220-FP 126N10N Maximum ratings, at T j=25.

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