IPA100N08N3G Datasheet - Infineon Technologies

IPA100N08N3G, Power-Transistor

IPA100N08N3 G OptiMOS(TM)3 Power-Transistor .

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Datasheet Details

Part number:

IPA100N08N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

309.79 KB

Description:

Power-Transistor

Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified acc

Applications

* Type IPA100N08N3 G Product Summary V DS R DS(on),max ID 80 10 40 V mΩ A Package Marking PG-TO220-FP 100N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pul

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IPA100N08N3G Power-Transistor Infineon Technologies

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