IPI80CN10N Datasheet - INCHANGE

IPI80CN10N, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI80CN10N *

Features

* Static drain-source on-resistance: RDS(on) ≤0.08Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pulsed 52 A PD Total Dissipation @TC=25℃ 31 W Tj Max.
Operating Junction Temperature 1

IPI80CN10N-INCHANGE.pdf