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IRF5210S - P-Channel MOSFET

IRF5210S Description

isc P-Channel MOSFET Transistor *.

IRF5210S Features

* Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF5210S Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -40 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature -55~175 Tstg Storage T

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Datasheet Details

Part number
IRF5210S
Manufacturer
INCHANGE
File Size
248.02 KB
Datasheet
IRF5210S-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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