IXKC13N80C Datasheet - INCHANGE

IXKC13N80C, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* High power dissipation
* Static drain-source on-resistance: RDS(on) ≤ 290mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 9 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~125 UNIT V V A A ℃ ℃

IXKC13N80C-INCHANGE.pdf