IXKC15N60C5 Datasheet, Mosfet, INCHANGE

IXKC15N60C5 Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤ 165mΩ@VGS=10V
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable oper

PDF File Details

Part number:

IXKC15N60C5

Manufacturer:

INCHANGE

File Size:

256.70kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXKC15N60C5 Application

• Applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 I

TAGS

IXKC15N60C5

INCHANGE

📁 Related Datasheet

IXKC15N60C5 - Power MOSFET (IXYS)
Advanced Technical Information IXKC 15N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan.

IXKC13N80C - CoolMOS Power MOSFET (IXYS Corporation)
Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Elect.

IXKC13N80C - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 290mΩ@VGS=10V ·100% avalanche tested .

IXKC19N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V ·100% avalanche tested .

IXKC19N60C5 - Power MOSFET (IXYS)
Advanced Technical Information IXKC 19N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan.

IXKC20N60C - CoolMOS Power MOSFET (IXYS Corporation)
IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS .

IXKC20N60C - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 190mΩ@VGS=10V ·100% avalanche tested .

IXKC23N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·100% avalanche tested .

IXKC23N60C5 - Power MOSFET (IXYS)
IXKC 23N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS.

IXKC25N80C - Power MOSFET (IXYS)
.. Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminar.