IXKC20N60C N-Channel MOSFET

INCHANGE

IXKC20N60C Description

isc N-Channel MOSFET Transistor *.

IXKC20N60C Features

* High power dissipation
* Static drain-source on-resistance: RDS(on) ≤ 190mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXKC20N60C Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 15 IDM Drain Current-Single Pulsed 10.5 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A ℃

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IXKC20N60C Datasheet Preview — Preview of IXKC20N60C PDF

Datasheet Details

Part number: IXKC20N60C
Manufacturer: INCHANGE
File Size: 257.04 KB
Datasheet: IXKC20N60C-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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