IXTH182N055T - N-Channel MOSFET
IXTH182N055T Features
* Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATION
* DC/DC Converters
* High Current Switchin
