IXTH180N10T Datasheet - IXYS Corporation

IXTH180N10T, Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on).

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IXTH180N10T-IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTH180N10T

Manufacturer:

IXYS Corporation

File Size:

195.75 KB

Description:

Power MOSFET

Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 2

Applications

* Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier © 2006 IXYS CORPORATION All

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IXTH180N10T Power MOSFET IXYS Corporation

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