IXTH30N60L2
INCHANGE
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N-channel mosfet.
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IXTH30N60L2 - Power MOSFET
(IXYS)
Preliminary Technical Information
Linear L2TM Power MOSFET with extended FBSOA
N-Channel Enhancement Mode Avalanche rated
IXTH30N60L2 IXTQ30N60L2 IX.
IXTH30N60P - PolarHV Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS
VDSS = 600 V ID25 = 3.
IXTH30N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot.
IXTH30N45 - N-Channel MOSFET
(IXYS)
Preliminary Data Sheet
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH 30N45 450 V IXTH 30N50 500 V
ID25
RDS(on)
30 A 0.16 Ω 30 A 0.17 Ω
TO-247.
IXTH30N50 - Power MOSFET
(IXYS Corporation)
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 30N50
VDSS = 500 V
ID (cont) =
30 A
RDS(on) = 0.17 Ω
Symbol
V DSS
V DGR V
GS
VGSM ID25 I
DM
PD TJ T.
IXTH30N50 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 170mΩ(Max) ·Fast Sw.
IXTH30N50L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTH30N50L
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching .
IXTH30N50L - Power MOSFET
(IXYS)
Preliminary Technical Information
Power MOSFET with Extended FBSOA
N-Channel Enhancement Mode
IXTH30N50L IXTQ30N50L IXTT30N50L
D O DD
Symbol VDSS V.
IXTH30N50L2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 200mΩ(Max) ·Fast Sw.
IXTH30N50L2 - Power MOSFET
(IXYS)
LinearL2TM Power MOSFET w/ Extended FBSOA
IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2
N-Channel Enhancement Mode
D O DD
R Gi
G O ww
O
S
Symbol
VDSS VDGR
V.