IXTM21N50 Datasheet - INCHANGE

IXTM21N50 N-Channel MOSFET

IXTM21N50 Features

* Drain Source Voltage- : VDSS= 500V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 250mΩ(Max)

* Fast Switching

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switch-Mode and Resonant-Mode Powe

Datasheet Details

IXTM21N50

INCHANGE

262.73 KB

N-channel mosfet.

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IXTM21N50 IXTM21N50 N-Channel MOSFET INCHANGE

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