IXTM21N50
INCHANGE
262.73kb
N-channel mosfet.
TAGS
📁 Related Datasheet
IXTM21N50 - MOSFET
(IXYS Corporation)
MegaMOSTMFET
IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode
VDSS 500 V 500 V
ID25
RDS(on)
21 A 0.25 Ω 24 A 0.23 Ω
Symbol VDSS VDG.
IXTM20N60 - N-Channel MOSFET
(IXYS)
MegaMOSTMFET
Obsolete: IXTM20N60
N-Channel Enhancement Mode
IXTH 20N60 IXTM 20N60
VDSS = 600 V
ID25 = 20 A RDS(on) = 0.35 Ω
Symbol
Test Conditions.
IXTM20N60 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
:.
IXTM24N45 - (IXTMxxxx) MOS FETs
(IXYS)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
IXTM24N50 - MOSFET
(IXYS Corporation)
MegaMOSTMFET
IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode
VDSS 500 V 500 V
ID25
RDS(on)
21 A 0.25 Ω 24 A 0.23 Ω
Symbol VDSS VDG.
IXTM24N50 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With To-3 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested.
IXTM10N100 - MOSFET
(IXYS Corporation)
..
MegaMOSTMFET
IXTH / IXTM 10N100 IXTH / IXTM 12N100
VDSS 1000 V 1000 V
ID25 10 A 12 A
RDS(on) 1.20 Ω 1.05 Ω
N-Channel Enhancem.
IXTM11N80 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
:.
IXTM11N80 - Power MOSFET
(IXYS)
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V
ID25
11 A 13 A
RDS(on)
0.95 Ω 0.80 Ω
Symbol
Test Con.
IXTM12N100 - MOSFET
(IXYS Corporation)
..
MegaMOSTMFET
IXTH / IXTM 10N100 IXTH / IXTM 12N100
VDSS 1000 V 1000 V
ID25 10 A 12 A
RDS(on) 1.20 Ω 1.05 Ω
N-Channel Enhancem.
