4 views

IXTU4N60P Datasheet - INCHANGE

IXTU4N60P N-Channel MOSFET

IXTU4N60P Features

* Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V

* Fully characterized avalanche voltage and current

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATION

* DC/DC Converter

* Ideal for high-frequenc

Datasheet Details

IXTU4N60P

INCHANGE

270.27 KB

N-channel mosfet.

📁 Related Datasheet

IXTU4N60P PolarHV Power MOSFET (IXYS)

IXTU4N70X2 Power MOSFET (IXYS)

IXTU4N70X2 N-Channel MOSFET (INCHANGE)

IXTU01N100 Power MOSFET (IXYS Corporation)

IXTU01N100D N-Channel MOSFET (IXYS Corporation)

IXTU01N80 Power MOSFET (IXYS Corporation)

IXTU02N50D Power MOSFET (IXYS Corporation)

IXTU05N100 N-Channel MOSFET (INCHANGE)

IXTU05N100 Power MOSFET (IXYS)

IXTU12N06T N-Channel MOSFET (INCHANGE)

TAGS

IXTU4N60P N-Channel MOSFET INCHANGE

Image Gallery

IXTU4N60P Distributor