Datasheet Details
- Part number
- SPA11N60CFD
- Manufacturer
- INCHANGE
- File Size
- 196.47 KB
- Datasheet
- SPA11N60CFD-INCHANGE.pdf
- Description
- N-Channel MOSFET
SPA11N60CFD Description
Isc N-Channel MOSFET Transistor *.
SPA11N60CFD Features
* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
SPA11N60CFD Applications
* Switching applications
INCHANGE Semiconductor
SPA11N60CFD
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
Drain Current-Single Pulsed
±30
11 7
28
PD
📁 Related Datasheet
📌 All Tags