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STB7ANM60N - N-Channel MOSFET

STB7ANM60N Description

isc N-Channel MOSFET Transistor *.

STB7ANM60N Features

* With TO-263(D2PAK) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STB7ANM60N Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous;@Tc=25℃ 5 A IDM Drain Current-Single Pulsed 20 A PD Total Dissipation 45

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Datasheet Details

Part number
STB7ANM60N
Manufacturer
INCHANGE
File Size
246.80 KB
Datasheet
STB7ANM60N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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