STB7ANM60N Datasheet - INCHANGE

STB7ANM60N, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* With TO-263(D2PAK) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous;@Tc=25℃ 5 A IDM Drain Current-Single Pulsed 20 A PD Total Dissipation 45

STB7ANM60N-INCHANGE.pdf