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STP15NM65N N-Channel MOSFET

STP15NM65N Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP15NM65N *.

STP15NM65N Features

* Typical RDS(on)=0.25Ω
* Low input capacitance and gate charge
* Low gate input resistances
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP15NM65N Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 15.5 10 62 PD Total Dissipation 150 Tj Operating Junction Temp

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Datasheet Details

Part number
STP15NM65N
Manufacturer
INCHANGE
File Size
200.98 KB
Datasheet
STP15NM65N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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