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STP9NM60N

N-Channel MOSFET

STP9NM60N Features

* Drain Current

* ID= 6.5A@ TC=25℃

* Drain Source Voltage- : VDSS= 600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 0.745Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

* Switching app

STP9NM60N Datasheet (271.33 KB)

Preview of STP9NM60N PDF

Datasheet Details

Part number:

STP9NM60N

Manufacturer:

INCHANGE

File Size:

271.33 KB

Description:

N-channel mosfet.

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STP9NM60N N-Channel MOSFET INCHANGE

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