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STP9NM60N N-Channel MOSFET

STP9NM60N Description

isc N-Channel MOSFET Transistor STP9NM60N .

STP9NM60N Features

* Drain Current
* ID= 6.5A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.745Ω(Max)
* 100% avalanche tested

STP9NM60N Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 6.5 A IDM Drain Current-Single Pluse 26 A PD Total Dissipation @TC=25℃ 70 W TJ Max. O

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Datasheet Details

Part number
STP9NM60N
Manufacturer
INCHANGE
File Size
271.33 KB
Datasheet
STP9NM60N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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