TK290A60Y - N-Channel MOSFET

INCHANGE

Datasheet Details

Low drain-source on-resistance: RDS(ON) = 0.29Ω (typ. ).
Easy to control Gate switching.
Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 4, 2020 |