IRGPH50M

INSULATED GATE BIPOLAR TRANSISTOR

IRF

IRGPH50M Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V

* Switching-loss rating includes all "tail" losses

* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 1200V G E VCE(sat) ≤ 2.9V @VGE = 15

IRGPH50M General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGPH50M Datasheet (255.49 KB)

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Datasheet Details

Part number:

IRGPH50M

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IRF

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255.49 KB

Description:

Insulated gate bipolar transistor.

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IRGPH50M Features

IRGPH50M General Description

Datasheet Details

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