IRGPH50M Datasheet - IRF

IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGPH50M Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V

* Switching-loss rating includes all "tail" losses

* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 1200V G E VCE(sat) ≤ 2.9V @VGE = 15

IRGPH50M Datasheet (255.49 KB)