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IRGPH50MD2 - INSULATED GATE BIPOLAR TRANSISTOR

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.

They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.

Features

  • Short circuit rated -10µs @125°C, V GE = 15V.
  • Switching-loss rating includes all "tail" losses TM.

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Datasheet Details

Part number IRGPH50MD2
Manufacturer IRF
File Size 1.32 MB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGPH50MD2 Datasheet
Additional preview pages of the IRGPH50MD2 datasheet.

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Full PDF Text Transcription

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Previous Datasheet Index Next Data Sheet PD - 9.1047A IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast CoPack IGBT VCES = 1200V VCE(sat) ≤ 2.9V G @VGE = 15V, I C = 23A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.
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