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IRGPH50S

INSULATED GATE BIPOLAR TRANSISTOR

IRGPH50S Features

* Switching-loss rating includes all "tail" losses

* Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 1200V VCE(sat) ≤ 2.0V @VGE = 15V, IC = 33A n-channel Description Insulated Gate Bipolar Transistors (I

IRGPH50S General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGPH50S Datasheet (96.85 KB)

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Datasheet Details

Part number:

IRGPH50S

Manufacturer:

IRF

File Size:

96.85 KB

Description:

Insulated gate bipolar transistor.

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