* / Advantages:
* Planar passivated chips
* Low leakage current
* Very short recovery time
* Improved thermal behaviour
* Very low Irm-values
* Very soft recovery behaviour
* Avalanche voltage rated for reliable operation
* Soft reverse recovery for low EMI/RFI
* Lo
DSEI12-06A Datasheet (170.29 KB)
DSEI12-06A
IXYS Corporation
170.29 KB
Fast recovery epitaxial diode.
FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI12-06A
3
1
DSEI12-06A
VRRM =
I FAV
=
t rr
=
600 V 14 A 35 ns
Backside: catho.
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