IXFE80N50 Datasheet - IXYS Corporation

IXFE80N50, Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet

Features

* Conforms to SOT-227B outline
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS)
* Low package inductance

Applications

* DC-DC converters rated Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 19 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 TJ = 25°C TJ = 125°C 4 ± 200 100 2 55 V V nA µA mA mΩ
* Battery c

IXFE80N50_IXYSCorporation.pdf