IXFE80N50 Datasheet - IXYS Corporation

IXFE80N50 Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω T.

IXFE80N50 Features

* Conforms to SOT-227B outline

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS)

* Low package inductance

* Fast intrinsic Rectifier Applications

* DC-DC converters rated Mounting to

IXFE80N50 Datasheet (109.97 KB)

IXFE80N50 Datasheet Preview — Preview of IXFE80N50 PDF

Datasheet Details

Part number:

IXFE80N50

Manufacturer:

IXYS Corporation

File Size:

109.97 KB

Description:

Power mosfet.

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