IXFH110N15T2 Datasheet - IXYS Corporation

IXFH110N15T2, TrenchT2 HiperFET Power MOSFET

Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFH110N15T2 VDSS ID25 RDS(on) = 15.

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IXFH110N15T2_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH110N15T2

Manufacturer:

IXYS Corporation

File Size:

182.18 KB

Description:

TrenchT2 HiperFET Power MOSFET

Features

* z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in. ) from case for 10s Plastic body for 10 seconds 300 260 6 International standard package 175°C Operating Temperature High current handling capability Fast intrinsic Rectifier Dynamic dV/dt rated Low RDS(on) Ad

Applications

* z z z ±200 nA 25 μA 500 μA 13 mΩ z z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies High speed power switching applications www. DataSheet4U. net © 2008 IXYS CORPORATION, All rights reserved DS100094

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IXFH110N15T2 TrenchT2 HiperFET Power MOSFET IXYS Corporation

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