* z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds 300 260 6 International standard package 175°C Operating Temperature High current handling capability Fast intrinsic Rectifier Dynamic dV/dt rated Low RDS(on) Ad
IXFH110N15T2 Datasheet (182.18 KB)
IXFH110N15T2
IXYS Corporation
182.18 KB
Trencht2 hiperfet power mosfet.
Preliminary Technical Information
TrenchT2TM HiperFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFH110N15T2
VDSS ID25
RDS(on)
= 15.
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