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Polar2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH52N50P2 IXFT52N50P2
VDSS = ID25 =
RDS(on) ≤
500V 52A 120mΩ
TO-247 (IXFH)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold
Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
52
A
150
A
52
A
1.5
J
15
V/ns
960
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13 / 10
6 4
Nm/lb.in.
IXFH52N50P2 Datasheet
