Polar2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH52N50P2 IXFT52N50P2 VDSS = ID25 = RDS(on) ≤ 500V 52A 120mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plast
IXFH52N50P2_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFH52N50P2
Manufacturer:
IXYS Corporation
File Size:
128.37 KB
Description:
N-channel power mosfet.