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IXFK73N30, IXFN73N30 Datasheet - IXYS Corporation

IXFK73N30 HiPerFET Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr V DSS IXFK 73 N 30 IXFN 73 N 30 ID25 RDS(on) 45 mΩ 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.9/6 10 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC =.

IXFK73N30 Features

* l International standard packages l JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification l miniBLOC with Aluminium nitride isolation l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance l Fast intri

IXFN73N30_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXFK73N30, IXFN73N30. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXFK73N30, IXFN73N30

Manufacturer:

IXYS Corporation

File Size:

156.27 KB

Description:

Hiperfet power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFK73N30, IXFN73N30.
Please refer to the document for exact specifications by model.

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IXFK73N30 IXFN73N30 HiPerFET Power MOSFETs IXYS Corporation

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