* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFL60N60 Datasheet (522.74 KB)
IXFL60N60
IXYS Corporation
522.74 KB
Mosfet.
HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 60N60 (Electrically Isolated Backside) Single Die MOSFET VDSS ID25 RDS(on) = 600 V = 60 A = 80 mΩ Pr.
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