z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
z Low drain to tab capacitance(
✔ IXFL60N60 Application
z DC-DC converters z Battery chargers z Switched-mode and resonant-mode
power supplies z DC choppers z AC mo
IXFL30N120P, IXYS Corporation
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.
IXFL36N110P, IXYS Corporation
Advance Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS V.