IXFN170N10 Datasheet - IXYS Corporation

IXFN170N10, Power MOSFET

HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data Symbol Test Conditions VDSS I D25 170A 170A RDS(on) 10mW 10mW trr 200ns 200ns IXFN170N.

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IXFN170N10_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN170N10

Manufacturer:

IXYS Corporation

File Size:

145.06 KB

Description:

Power MOSFET

Features

* International standard packages
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low packa

Applications

* DC-DC converters
* Synchronous rectification
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* Temperature and lighting controls
* Low voltage relays Advantages
* Easy to mount
* Space savings
* High power density 97505D (7/

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IXFN170N10 Power MOSFET IXYS Corporation

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