IXFN170N10 Datasheet - IXYS Corporation

IXFN170N10 - Power MOSFET

HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data Symbol Test Conditions VDSS I D25 170A 170A RDS(on) 10mW 10mW trr 200ns 200ns IXFN170N10 IXFK170N10 100V 100V TO-264 AA (IXFK) Maximum Ratings IXFK IXFN 170N10 170N10 100 100 ±20 ±30 170 76 680 170 60 5 560 -55 +150°C 150 -55 +150°C 100 100 ±20 ±30 170 NA 680 170 60 5 V V V V A A A mJ S G D S VDSS VDGR VGS VGSM ID25 ID125 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight T J = 25°C to 150°C T J = 25°C to 150°.

IXFN170N10 Features

* International standard packages

* Encapsulating epoxy meets UL 94 V-0, flammability classification

* miniBLOC with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low packa

IXFN170N10_IXYSCorporation.pdf