HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s IS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC= 25°C, Chip capability TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C I
Datasheet Details
Part number:
IXFN60N60
Manufacturer:
IXYS Corporation
File Size:
71.37 KB
Description:
Hiperfet power mosfet.