IXFN60N60 Datasheet - IXYS Corporation

IXFN60N60 HiPerFET Power MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s IS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC= 25°C, Chip capability TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C I.

IXFN60N60 Features

* International standard packages

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1

IXFN60N60 Datasheet (71.37 KB)

IXFN60N60 Datasheet Preview — Preview of IXFN60N60 PDF

Datasheet Details

Part number:

IXFN60N60

Manufacturer:

IXYS Corporation

File Size:

71.37 KB

Description:

Hiperfet power mosfet.

📁 Related Datasheet

IXFN61N50 High Current Power MOSFET (IXYS)

IXFN64N50P HiPerFET Power MOSFET (IXYS Corporation)

IXFN64N50PD2 Power MOSFET (IXYS Corporation)

IXFN64N50PD3 Power MOSFET (IXYS Corporation)

IXFN66N50Q2 HiPerFET Power MOSFET (IXYS)

IXFN66N85X Power MOSFET (IXYS)

IXFN100N10S1 HiPerFET Power MOSFETs (IXYS Corporation)

IXFN100N10S2 HiPerFET Power MOSFETs (IXYS Corporation)

TAGS

IXFN60N60 HiPerFET Power MOSFET IXYS Corporation

IXFN60N60 Distributor