IXFN60N60 Datasheet - IXYS Corporation

IXFN60N60, HiPerFET Power MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM .

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IXFN60N60_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN60N60

Manufacturer:

IXYS Corporation

File Size:

71.37 KB

Description:

HiPerFET Power MOSFET

Features

* International standard packages
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1

Applications

* DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2 4.5 ±200 TJ = 25°C TJ = 125°C 100 2 75 V V nA mA mA mW
* Battery chargers Switched-mode and resonant-mode power supplies DC

IXFN60N60 Distributors

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IXFN60N60 HiPerFET Power MOSFET IXYS Corporation

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