IXFN60N60 Datasheet - IXYS Corporation

IXFN60N60 HiPerFET Power MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s IS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC= 25°C, Chip capability TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C I.

IXFN60N60 Features

* International standard packages

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1

IXFN60N60_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN60N60

Manufacturer:

IXYS Corporation

File Size:

71.37 KB

Description:

Hiperfet power mosfet.

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IXFN60N60 IXFN60N60 HiPerFET Power MOSFET IXYS Corporation

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