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IXFN60N60

HiPerFET Power MOSFET

IXFN60N60 Features

* International standard packages

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1

IXFN60N60 Datasheet (71.37 KB)

Preview of IXFN60N60 PDF

Datasheet Details

Part number:

IXFN60N60

Manufacturer:

IXYS Corporation

File Size:

71.37 KB

Description:

Hiperfet power mosfet.
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM .

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IXFN60N60 HiPerFET Power MOSFET IXYS Corporation

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