* International standard package
* Isolation voltage 3000V (RMS)
* Low R DS (on) HDMOSTM processl
* Rugged polysilicon gate cell structure
* Low drain-to-case capacitance (
IXFN61N50 Datasheet (54.17 KB)
IXFN61N50
IXYS
54.17 KB
High current power mosfet.
IXFN 58N50 IXFN 61N50
Preliminary Data Sheet www.DataSheet4U.com
VDSS
ID25 58A 61A
RDS(on) 85 mΩ 75 mΩ
High Current Power MOSFET
N-Channel Enhance.
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