IXFN61N50 High Current Power MOSFET

IXYS

Description

IXFN 58N50 IXFN 61N50 Preliminary Data Sheet www.DataSheet4U.com VDSS ID25 58A 61A RDS(on) 85 mΩ 75 mΩ High Current Power MOSFET N-Channel Enhance.

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Datasheet Specifications

Part number: IXFN61N50
Manufacturer: IXYS
File Size: 54.17 KB
Datasheet: IXFN61N50_IXYS.pdf
Description: High Current Power MOSFET

Features

* International standard package
* Isolation voltage 3000V (RMS)
* Low R DS (on) HDMOSTM processl
* Rugged polysilicon gate cell structure
* Low drain-to-case capacitance (

Applications

* DC choppers
* AC motor speed controls
* DC servo and robot drives
* Uninterruptible power supplies (UPS)
* Switched mode and resonant mode power supplies Advantages
* Easy to mount
* Space savings
* High power density 1 = Source 3 = D

IXFN61N50 Distributors

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IXFN61N50 High Current Power MOSFET IXYS

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