IXFN61N50 Datasheet - IXYS

IXFN61N50 - High Current Power MOSFET

IXFN 58N50 IXFN 61N50 Preliminary Data Sheet www.DataSheet4U.com VDSS ID25 58A 61A RDS(on) 85 mΩ 75 mΩ High Current Power MOSFET N-Channel Enhancement Mode IXFN 58N50 500V IXFN 61N50 500V Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C TC = 25°C (1) TC = 25°C IXFN IXFN IXFN IXFN Maximum Ratings 500 500 ±20 ±30 58N50 61N50 58N50 61N50 58 61 232 244 625 -40 +150 150 -40 +150 V V.

IXFN61N50 Features

* International standard package

* Isolation voltage 3000V (RMS)

* Low R DS (on) HDMOSTM processl

* Rugged polysilicon gate cell structure

* Low drain-to-case capacitance (

IXFN61N50_IXYS.pdf