IXFN64N50PD2 Datasheet - IXYS Corporation

IXFN64N50PD2 Power MOSFET

PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations (Ultra-fast FRED Diode) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN64N50PD2 IXFN64N50PD3 3 4 3 VDSS ID25 trr RDS(on) = 500V = 50A ≤ 85mΩ ≤ 200ns miniBLOC, SOT-227 B E153432 2 1 4 2 2 D2 1 D3 1 4 3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg Md www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Wid.

IXFN64N50PD2 Features

* z Mounting Torque Terminal Connection Torque 1.5/13 1.3/11.5 30 Fast Intrinsic Diode in Boost Configuration z International Standard Package z Encapsulating Epoxy Meets UL 94 V-0, Flammability Classification z miniBLOC with Aluminium Nitride Isolation z Avalanche Rated z Low Package Inductance W

IXFN64N50PD2_IXYSCorporation.pdf