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IXFN66N85X Datasheet - IXYS

IXFN66N85X - Power MOSFET

Advance Technical Information X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN66N85X D G S S VDSS = ID25 = RDS(on)  850V 65A 65m miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  15

IXFN66N85X Features

* International Standard Package

* miniBLOC, with Aluminium Nitride Isolation

* Isolation Voltage 2500 V~

* High Current Handling Capability

* Fast Intrinsic Diode

* Avalanche Rated

* Low RDS(on) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS

IXFN66N85X-IXYS.pdf

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Datasheet Details

Part number:

IXFN66N85X

Manufacturer:

IXYS

File Size:

129.03 KB

Description:

Power mosfet.

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IXFN66N85X Power MOSFET IXYS