IXFN66N50Q2 Datasheet - IXYS

IXFN66N50Q2 - HiPerFET Power MOSFET

HiPerFET Power MOSFET TM www.DataSheet4U.com IXFN66N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 66 A RDS(on)= 80 mΩ ≤ 250 ns trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C.

IXFN66N50Q2 Features

* z l Double metal process for low gate resistance z miniBLOC, with Aluminium nitride isolation z Unclamped Inductive Switching (UIS) rated z Low package inductance z Fast intrinsic Rectifier Applications z DC-DC converters z Switched-mode and resonant-mode power supplies z DC choppers z Pulse generat

IXFN66N50Q2_IXYS.pdf

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Datasheet Details

Part number:

IXFN66N50Q2

Manufacturer:

IXYS

File Size:

169.76 KB

Description:

Hiperfet power mosfet.

IXFN66N50Q2 Distributor

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IXFN66N50Q2 HiPerFET Power MOSFET IXYS