* l l l l 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Test Conditions 300 1.13/10 6 4 IXYS advanced low Qg process International standard packages Low RDS (on) Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ±100 TJ = 25°C TJ
IXFT24N50Q Datasheet (134.05 KB)
IXFT24N50Q
IXYS Corporation
134.05 KB
Power mosfet.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q ID25 RDS(on).
📁 Related Datasheet
IXFT24N50 Power MOSFET (IXYS Corporation)
IXFT24N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFT24N90P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFT20N100P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFT20N60Q HiPerFET Power MOSFETs Q-Class (IXYS Corporation)
IXFT20N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFT20N80Q Power MOSFET (IXYS Corporation)
IXFT21N50F HiPerRF Power MOSFETs (IXYS Corporation)
IXFT21N50Q Power MOSFET (IXYS)
IXFT22N60P PolarHV HiPerFET Power MOSFETs (IXYS)
