IXFT24N90P - Polar Power MOSFET HiPerFET
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH24N90P IXFT24N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 24A 420mΩ 300ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°.
IXFT24N90P Features
* z z z z
TAB
TO-268 (IXFT)
G
S
TAB
G = Gate S = Source
D = Drain TAB = Drain
International standard packages Avalanche Rated Low package inductance Fast intrinsic diode
Advantages
z z z
Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25°C, unless otherwise speci