Description
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH24N90P IXFT24N.
Features
* z z z z
TAB
TO-268 (IXFT)
G
S
TAB
G = Gate S = Source
D = Drain TAB = Drain
International standard packages Avalanche Rated Low package inductance Fast intrinsic diode
Advantages
z z z
Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25°C, unless otherwise speci
Applications
* z
z
V nA
z z z
25 μA 2 mA 420 mΩ
Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls
VGS = 10V, ID = 0.5
* ID25, Note 1
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DS100059(10/08)
www. DataSheet. in
IXFH24