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Advanced Technical Information
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXFH 28N50Q IXFT 28N50Q
VDSS = 500 V = 28 A ID25 RDS(on) = 0.20 Ω trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 500 500 ±30 ±40 28 112 28 50 2.0 20 375 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W °C °C °C °C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G S (TAB)
G = Gate D = Drain S = Source TAB = Drain
1.6 mm (0.
IXFT28N50Q Datasheet
