www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT30N50Q3 IXFH30N50Q3 VDSS ID25 RDS(on) = 500V = 30A ≤ 200mΩ TO-268 (IXFT) G S D (Tab) V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.
g g z z z z z Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C