IXFT30N50Q3 Description
www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectif.
IXFT30N50Q3 Features
* Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247
300 260 1.13 / 10 4.0 6.0
Advantages
z z
Symbol Test Conditions (
IXFT30N50Q3 Applications
* z z z
10 μA 500 μA 200 mΩ
z z
VGS = 10V, ID = 0.5
* ID25, Note 1
DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS100338(05/11)
Datasheet pdf - http://www. DataShe
📁 Related Datasheet
📌 All Tags
IXFT30N50Q3 Stock/Price
